Principal GaN Process Development Engineer - Hamburg, Deutschland - Nexperia Germany GmbH

Beschreibung

What you will do Define, develop and further improve GaN front-end fabrication processes across manufacturing sites with a focus on device performance, quality, reliability, processing efficiency and cost Develop test structures to screen the fab process and the device efficiently, with a primary focus on improving ohmic contacts and intermetal stacks Plan and lead projects, identifying requirements and financial impact with a focus on the evaluation and setup of 8" GaN processing capability Carry out risk assessments and problem solving activities using data from trials, lab investigations, formal problem-solving methods and peer review Specify device design and application requirements Implement specific and relevant GaN fab process performance metrics and support reporting, project documentation and product release processes What you will need Master's degree in Electrical/Electronic Engineering or a similar discipline, PhD preferred In depth understanding of semiconductor wafer fabrication processes the potential impact device characteristics, especially for III-V technologies and GaN Proven track record in in leading and managing complex multi-disciplinary projects Excellent analytical and problem solving skills Ability to communicate and negotiate effectively at all levels within the organisation and to encourage teamwork across geographical and cultural boundaries Ability to lead by example and to motivate engineers throughout the organization, bringing and sharing knowledge of GaN processing and related fields

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